THE GERMANIUM DIARIES

≤ 0.fifteen) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the construction is cycled via oxidizing and annealing levels. Due to the preferential oxidation of Si about Ge [68], the initial Si1–s in biaxially compressive strained QWs from Shubnikov-de Haas or cyclotron resonance